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  , u na. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA2151 description ? high collector-emitter breakdown voltage- v(br)ceo= -200v(min) ? good linearity of hfe ? complement to type 2sc6011 applications ? designed for audio and general purpose applications absolute maximum ratings(ta=25 c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25"c junction temperature storage temperature range value -200 -200 -6 -15 -4 160 150 -55-150 unit v v v a a w c r ./ 1 1 i 2 3 f px^ r^, i pin 1.8ase 2. collector 3- emitter to-3pn package ut 1 f k ? ffl ? ' o '- t ij 'i r :' r s t i u i dim a b c d e f 6 h j k l n q r s u y -**-s jv --r mm mm 19.90 15.50 4.70 0.90 1.90 3.40 2.90 3.20 0.595 20.50 1.90 10.89 4.90 3.35 1.995 5.90 max 20.10 15.70 4.90 1.10 2.10 3.60 3.10 3.40 0.605 20.70 2.10 10.91 5.10 3.45 2.005 6.1 ? 9.90 10.10 i i if yjf l! j u nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA2151 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo vce(sat) icbo iebo hfe cob fr parameter collector-emitter breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain output capacitance current-gain ? bandwidth product conditions lc= -50ma ; la= 0 lc= -5a; ib= -0.5a vcs= -200v ; ie= 0 veb= -6v; ig= 0 lc= -3a ; vce= -4v |e=0; vcb=-10v;f= 1.0mhz ie=0.5a; vce=-12v min -200 50 typ. 450 20 max -0.5 -10 -10 180 unit v v ua ua pf mhz classifications 0 50-100 p 70-140 y 90-180


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